IXFT18N90P
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IXYS IXFT18N90P

Manufacturer No:
IXFT18N90P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT18N90P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 18A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:97 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT18N90P IXFV18N90P   IXFR18N90P  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 10V 600mOhm @ 500mA, 10V 660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 97 nC @ 10 V 97 nC @ 10 V 97 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5230 pF @ 25 V 5230 pF @ 25 V 5230 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 540W (Tc) 540W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package TO-268AA PLUS220 ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-220-3, Short Tab TO-247-3

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