IXFT18N100Q3
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IXYS IXFT18N100Q3

Manufacturer No:
IXFT18N100Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT18N100Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 18A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT18N100Q3 IXFT15N100Q3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 9A, 10V 1.05Ohm @ 7.5A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 25 V 3250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 690W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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