IXFT16N80P
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IXYS IXFT16N80P

Manufacturer No:
IXFT16N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT16N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 16A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):460W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT16N80P IXFV16N80P   IXFR16N80P   IXFT14N80P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V - 800 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc) - 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 10V 600mOhm @ 500mA, 10V - 720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA - 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 71 nC @ 10 V - 61 nC @ 10 V
Vgs (Max) ±30V ±30V - ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4600 pF @ 25 V - 3900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 460W (Tc) 460W (Tc) - 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Surface Mount
Supplier Device Package TO-268AA PLUS220 ISOPLUS247™ TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-220-3, Short Tab TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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