IXFT16N120P
  • Share:

IXYS IXFT16N120P

Manufacturer No:
IXFT16N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT16N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 16A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):660W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$21.09
16

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFT16N120P IXFR16N120P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 500mA, 10V 1.04Ohm @ 8A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V 6900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 660W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

FQP3P50
FQP3P50
onsemi
MOSFET P-CH 500V 2.7A TO220-3
PMG85XP,115
PMG85XP,115
NXP USA Inc.
NOW NEXPERIA PMG85XP - SMALL SIG
BUZ30AH3045A
BUZ30AH3045A
Infineon Technologies
BUZ30 - 12V-300V N-CHANNEL POWER
FCI7N60
FCI7N60
Fairchild Semiconductor
MOSFET N-CH 600V 7A I2PAK
DMT10H009SK3-13
DMT10H009SK3-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
IRF840LCPBF-BE3
IRF840LCPBF-BE3
Vishay Siliconix
MOSFET N-CHANNEL 500V
IXTH67N10
IXTH67N10
IXYS
MOSFET N-CH 100V 67A TO247
STW25NM50N
STW25NM50N
STMicroelectronics
MOSFET N-CH 500V 22A TO247-3
CSD23201W10
CSD23201W10
Texas Instruments
MOSFET P-CH 12V 2.2A 4DSBGA
BUK724R5-30C,118
BUK724R5-30C,118
Nexperia USA Inc.
MOSFET N-CH 30V 75A DPAK
TSM2N60ECH C5G
TSM2N60ECH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 2A TO251
RS3E075ATTB1
RS3E075ATTB1
Rohm Semiconductor
PCH -30V -7.5A MIDDLE POWER MOSF

Related Product By Brand

DHG60C600HB
DHG60C600HB
IXYS
DIODE ARRAY GP 600V 30A TO247AD
DCG160X650NA
DCG160X650NA
IXYS
PWR DIODE DISC-SCHOTTKY SOT-227B
DAA10EM1800PZ-TRL
DAA10EM1800PZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
CS19-12HO1
CS19-12HO1
IXYS
SCR 1.2KV 29A TO220AB
IXFH340N075T2
IXFH340N075T2
IXYS
MOSFET N-CH 75V 340A TO247AD
IXFN90N85X
IXFN90N85X
IXYS
MOSFET N-CH 850V 90A SOT227B
IXFA72N20X3
IXFA72N20X3
IXYS
MOSFET N-CH 200V 72A TO263AA
IXTA86N20T-TRL
IXTA86N20T-TRL
IXYS
MOSFET N-CH 200V 86A TO263
IXTH180N085T
IXTH180N085T
IXYS
MOSFET N-CH 85V 180A TO247
IXYN110N120A4
IXYN110N120A4
IXYS
IGBT 1200V 110A GNX4 XPT SOT227B
IXSP15N120B
IXSP15N120B
IXYS
IGBT 1200V 30A 150W TO220AB
IXDN502D1T/R
IXDN502D1T/R
IXYS
IC GATE DRVR LOW-SIDE 6DFN