IXFT16N120P
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IXYS IXFT16N120P

Manufacturer No:
IXFT16N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT16N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 16A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):660W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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$21.09
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Similar Products

Part Number IXFT16N120P IXFR16N120P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 500mA, 10V 1.04Ohm @ 8A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V 6900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 660W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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