IXFT15N100Q
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IXYS IXFT15N100Q

Manufacturer No:
IXFT15N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT15N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 15A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT15N100Q IXFT15N100Q3   IXFT12N100Q  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 500mA, 10V 1.05Ohm @ 7.5A, 10V 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 6.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 5 V 64 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 3250 pF @ 25 V 2900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 690W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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