IXFT12N100
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IXYS IXFT12N100

Manufacturer No:
IXFT12N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFT12N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 12A TO268
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXFT12N100 IXFT13N100   IXFT12N100Q   IXFT14N100   IXFT12N100F   IXFR12N100   IXFT10N100  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12.5A (Tc) 12A (Tc) 14A (Tc) 12A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V - 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V 900mOhm @ 500mA, 10V 1.05Ohm @ 6A, 10V 750mOhm @ 500mA, 10V 1.05Ohm @ 6A, 10V 1.1Ohm @ 6A, 10V 1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 5.5V @ 4mA 4.5V @ 4mA 5.5V @ 4mA 5.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V 155 nC @ 10 V 90 nC @ 10 V 220 nC @ 10 V 77 nC @ 10 V 90 nC @ 10 V 155 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V 4000 pF @ 25 V 2900 pF @ 25 V 4500 pF @ 25 V 2700 pF @ 25 V 2900 pF @ 25 V 4000 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc) 360W (Tc) 300W (Tc) - 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA TO-268 ISOPLUS247™ TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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