IXFR80N10Q
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IXYS IXFR80N10Q

Manufacturer No:
IXFR80N10Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR80N10Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 76A ISOPLUS247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 76A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR80N10Q IXFR80N15Q   IXFR80N20Q  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V 200 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 75A (Tc) 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 76A, 10V 22.5mOhm @ 40A, 10V 28mOhm @ 80A, 10V
Vgs(th) (Max) @ Id - 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 4600 pF @ 25 V 4600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 310W (Tc) 310W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3 TO-247-3

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