IXFR64N50P
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IXYS IXFR64N50P

Manufacturer No:
IXFR64N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR64N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 35A ISOPLUS247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR64N50P IXFR64N60P   IXFR44N50P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 36A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 32A, 10V 105mOhm @ 32A, 10V 150mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 200 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V 12000 pF @ 25 V 5440 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 320W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3 TO-247-3

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