IXFR44N50P
  • Share:

IXYS IXFR44N50P

Manufacturer No:
IXFR44N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR44N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 24A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$14.83
14

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFR44N50P IXFR64N50P   IXFR44N80P   IXFT44N50P   IXFR44N50Q  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 800 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 35A (Tc) 25A (Tc) 44A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 22A, 10V 95mOhm @ 32A, 10V 200mOhm @ 22A, 10V 140mOhm @ 22A, 10V 120mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5.5V @ 8mA 5V @ 8mA 5V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 150 nC @ 10 V 200 nC @ 10 V 98 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5440 pF @ 25 V 8700 pF @ 25 V 12000 pF @ 25 V 5440 pF @ 25 V 7000 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 208W (Tc) 300W (Tc) 300W (Tc) 658W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ TO-268AA ISOPLUS247™
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

FDS6676
FDS6676
Fairchild Semiconductor
SMALL SIGNAL N-CHANNEL MOSFET
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
IPP110N20NAAKSA1
IPP110N20NAAKSA1
Infineon Technologies
MOSFET N-CH 200V 88A TO220-3
STB9NK50ZT4
STB9NK50ZT4
STMicroelectronics
MOSFET N-CH 500V 7.2A D2PAK
STD52P3LLH6
STD52P3LLH6
STMicroelectronics
MOSFET P-CH 30V 52A DPAK
STD9NM50N
STD9NM50N
STMicroelectronics
MOSFET N-CH 500V 5A DPAK
BSZ0994NSATMA1
BSZ0994NSATMA1
Infineon Technologies
MOSFET N-CH 30V 13A 8TSDSON-25
BUK714R1-40BT,118
BUK714R1-40BT,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A SOT426
STP19NM65N
STP19NM65N
STMicroelectronics
MOSFET N-CH 650V 15.5A TO220AB
BSP296 E6433
BSP296 E6433
Infineon Technologies
MOSFET N-CH 100V 1.1A SOT223-4
SI6473DQ-T1-GE3
SI6473DQ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 6.2A 8TSSOP
BSD314SPEL6327HTSA1
BSD314SPEL6327HTSA1
Infineon Technologies
MOSFET P-CH 30V 1.5A SOT363-6

Related Product By Brand

DSDI60-16A
DSDI60-16A
IXYS
DIODE GEN PURP 1.6KV 63A TO247AD
MCD44-16IO1B
MCD44-16IO1B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
MCC162-16IO1B
MCC162-16IO1B
IXYS
BIPOLAR MODULE - THYRISTOR Y4-M
IXKN45N80C
IXKN45N80C
IXYS
MOSFET N-CH 800V 44A SOT-227B
IXTA2R4N120P-TRL
IXTA2R4N120P-TRL
IXYS
MOSFET N-CH 1200V 2.4A TO263
IXFN150N15
IXFN150N15
IXYS
MOSFET N-CH 150V 150A SOT227B
IXFR30N110P
IXFR30N110P
IXYS
MOSFET N-CH 1100V 16A ISOPLUS247
IXTT60N10
IXTT60N10
IXYS
MOSFET N-CH 100V 60A TO268
IXSN35N100U1
IXSN35N100U1
IXYS
IGBT MOD 1000V 38A 205W SOT227B
IXGH32N170
IXGH32N170
IXYS
IGBT 1700V 75A 350W TO247AD
IXGH48N60B3
IXGH48N60B3
IXYS
IGBT 600V 300W TO247AD
ZY200L340
ZY200L340
IXYS
ACCESSORY GATE WIRE FOR TO-240