IXFR30N60P
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IXYS IXFR30N60P

Manufacturer No:
IXFR30N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR30N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 15A ISOPLUS247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3820 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):166W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR30N60P IXFR36N60P   IXFT30N60P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 20A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 15A, 10V 200mOhm @ 18A, 10V 240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 102 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3820 pF @ 25 V 5800 pF @ 25 V 4000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 166W (Tc) 208W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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