IXFR26N60Q
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IXYS IXFR26N60Q

Manufacturer No:
IXFR26N60Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR26N60Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 23A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR26N60Q IXFT26N60Q   IXFR26N50Q  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 26A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 13A, 10V 250mOhm @ 13A, 10V 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 5100 pF @ 25 V 3900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 310W (Tc) 360W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package ISOPLUS247™ TO-268AA ISOPLUS247™
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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