IXFR24N90Q
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IXYS IXFR24N90Q

Manufacturer No:
IXFR24N90Q
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFR24N90Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR24N90Q IXFR24N50Q   IXFR24N90P  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 500 V 900 V
Current - Continuous Drain (Id) @ 25°C - 22A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 230mOhm @ 12A, 10V 460mOhm @ 12A, 10V
Vgs(th) (Max) @ Id - 4.5V @ 4mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 95 nC @ 10 V 130 nC @ 10 V
Vgs (Max) - ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds - 3900 pF @ 25 V 7200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 250W (Tc) 230W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3 TO-247-3

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