IXFR24N90P
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IXYS IXFR24N90P

Manufacturer No:
IXFR24N90P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR24N90P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 13A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:460mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR24N90P IXFT24N90P   IXFR24N90Q   IXFR24N80P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 800 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 24A (Tc) - 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Rds On (Max) @ Id, Vgs 460mOhm @ 12A, 10V 420mOhm @ 12A, 10V - 420mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA - 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V - 105 nC @ 10 V
Vgs (Max) ±30V ±30V - ±30V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V 7200 pF @ 25 V - 7200 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 230W (Tc) 660W (Tc) - 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package ISOPLUS247™ TO-268AA ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-247-3

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