IXFR20N80P
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IXYS IXFR20N80P

Manufacturer No:
IXFR20N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR20N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 11A ISOPLUS247
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):166W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR20N80P IXFR24N80P   IXFT20N80P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 13A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V 420mOhm @ 12A, 10V 520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 105 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4680 pF @ 25 V 7200 pF @ 25 V 4685 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 166W (Tc) 208W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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