IXFR20N100P
  • Share:

IXYS IXFR20N100P

Manufacturer No:
IXFR20N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR20N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 11A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:640mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
231

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFR20N100P IXFT20N100P   IXFR20N120P   IXFR26N100P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 20A (Tc) 13A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 640mOhm @ 10A, 10V 570mOhm @ 10A, 10V 630mOhm @ 10A, 10V 430mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V 126 nC @ 10 V 193 nC @ 10 V 197 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 25 V 7300 pF @ 25 V 11100 pF @ 25 V 11900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 230W (Tc) 660W (Tc) 290W (Tc) 290W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package ISOPLUS247™ TO-268AA ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-247-3

Related Product By Categories

IRL640STRLPBF
IRL640STRLPBF
Vishay Siliconix
MOSFET N-CH 200V 17A D2PAK
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1
Infineon Technologies
MOSFET N-CH 40V 70A 8TDSON-34
PSMN1R9-40YSDX
PSMN1R9-40YSDX
Nexperia USA Inc.
MOSFET N-CH 40V 200A LFPAK56
SQJ164ELP-T1_GE3
SQJ164ELP-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 60 V (D-S)
NTMT190N65S3H
NTMT190N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
DMN5040LSS-13
DMN5040LSS-13
Diodes Incorporated
MOSFET N-CH 50V 5.2A 8SO T&R 2
NVMFS5C468NLAFT3G
NVMFS5C468NLAFT3G
onsemi
MOSFET N-CH 40V 13A/37A 5DFN
IRF3007PBF
IRF3007PBF
Infineon Technologies
MOSFET N-CH 75V 75A TO220AB
IPW60R165CP
IPW60R165CP
Infineon Technologies
21A, 600V, 0.165OHM, N-CHANNEL M
IRFR3910PBF
IRFR3910PBF
Infineon Technologies
MOSFET N-CH 100V 16A DPAK
FQD5N50CTM-WS
FQD5N50CTM-WS
onsemi
MOSFET N-CHANNEL 500V 4A TO252
TSM3N90CP ROG
TSM3N90CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A TO252

Related Product By Brand

DSB60C60HB
DSB60C60HB
IXYS
DIODE ARRAY SCHOTTKY 60V TO247AD
DSB60C30HB
DSB60C30HB
IXYS
DIODE ARRAY SCHOTTKY 30V TO247AD
DSEP29-06AS-TRL
DSEP29-06AS-TRL
IXYS
DIODE GEN PURP 600V 30A TO263
DHG60I600HA
DHG60I600HA
IXYS
DIODE GEN PURP 600V 60A TO247
MCD312-16IO1
MCD312-16IO1
IXYS
MOD THYRISTOR/DIODE 1600V Y1-CU
IXFA110N15T2
IXFA110N15T2
IXYS
MOSFET N-CH 150V 110A TO263
IXFN44N60
IXFN44N60
IXYS
MOSFET N-CH 600V 44A SOT-227B
IXUN280N10
IXUN280N10
IXYS
MOSFET N-CH 100V 280A SOT-227B
IXUC100N055
IXUC100N055
IXYS
MOSFET N-CH 55V 100A ISOPLUS220
IXSP10N60B2D1
IXSP10N60B2D1
IXYS
IGBT 600V 20A 100W TO220AB
IXGF36N300
IXGF36N300
IXYS
IGBT 3000V 36A 160W I4-PAK
IX2C11S1T/R
IX2C11S1T/R
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC