IXFR180N06
  • Share:

IXYS IXFR180N06

Manufacturer No:
IXFR180N06
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR180N06 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 180A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:420 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):560W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$18.39
12

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFR180N06 IXFR180N07  
Manufacturer IXYS IXYS
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 70 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 90A, 10V 6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 420 nC @ 10 V 420 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7650 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 560W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IXTP18P10T
IXTP18P10T
IXYS
MOSFET P-CH 100V 18A TO220AB
STP25N60M2-EP
STP25N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 18A TO220
SCH1331-TL-H
SCH1331-TL-H
onsemi
SCH1331 - 12V, 3A, PNP POWER MOS
SI8817DB-T2-E1
SI8817DB-T2-E1
Vishay Siliconix
MOSFET P-CH 20V 4MICROFOOT
IRFPG40
IRFPG40
Vishay Siliconix
MOSFET N-CH 1000V 4.3A TO247-3
IRLR8113TR
IRLR8113TR
Infineon Technologies
MOSFET N-CH 30V 94A DPAK
ZVN4306ASTZ
ZVN4306ASTZ
Diodes Incorporated
MOSFET N-CH 60V 1.1A E-LINE
SPB80N06S2-08
SPB80N06S2-08
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
NTHD3101FT3G
NTHD3101FT3G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
SUM33N20-60P-E3
SUM33N20-60P-E3
Vishay Siliconix
MOSFET N-CH 200V 33A TO263
FDD3672-F085
FDD3672-F085
onsemi
MOSFET N-CH 100V 44A TO252AA
RSS070N05TB1
RSS070N05TB1
Rohm Semiconductor
MOSFET N-CH 45V 7A 8SOP

Related Product By Brand

MDMA50P1200TG
MDMA50P1200TG
IXYS
DIODE MODULE 1.2KV 50A TO240AA
DPG30I300PA
DPG30I300PA
IXYS
DIODE GEN PURP 300V 30A TO220AC
DHG30IM600PC-TUB
DHG30IM600PC-TUB
IXYS
POWER DIODE DISCRETES-SONIC TO-2
MCC255-14IO1
MCC255-14IO1
IXYS
MOD THYRISTOR DUAL 1400V Y1-CU
IXFX200N10P
IXFX200N10P
IXYS
MOSFET N-CH 100V 200A PLUS247-3
IXFX24N100Q3
IXFX24N100Q3
IXYS
MOSFET N-CH 1000V 24A PLUS247-3
IXFN24N90Q
IXFN24N90Q
IXYS
MOSFET N-CH 900V 24A SOT-227B
IXTU06N120P
IXTU06N120P
IXYS
MOSFET N-CH 1200V 600MA TO251
IXFK100N10
IXFK100N10
IXYS
MOSFET N-CH 100V 100A TO264AA
IXXX200N60C3
IXXX200N60C3
IXYS
IGBT 600V 200A PLUS247
IXYH40N65C3D1
IXYH40N65C3D1
IXYS
IGBT 650V 80A 300W TO247
IXGH28N90B
IXGH28N90B
IXYS
IGBT 900V 51A 200W TO247AD