IXFR140N20P
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IXYS IXFR140N20P

Manufacturer No:
IXFR140N20P
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFR140N20P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 90A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR140N20P IXFR140N30P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 300 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 45A, 10V 26mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 185 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V 14800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3

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