IXFR12N100Q
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IXYS IXFR12N100Q

Manufacturer No:
IXFR12N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR12N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 10A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXFR12N100Q IXFT12N100Q   IXFR10N100Q   IXFR12N100  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 12A (Tc) 9A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Rds On (Max) @ Id, Vgs 1.1Ohm @ 6A, 10V 1.05Ohm @ 6A, 10V 1.2Ohm @ 5A, 10V 1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 4mA 5.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 90 nC @ 10 V 90 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 250W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package ISOPLUS247™ TO-268AA ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-247-3

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