IXFR12N100
  • Share:

IXYS IXFR12N100

Manufacturer No:
IXFR12N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFR12N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 10A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
30

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFR12N100 IXFR12N100Q   IXFT12N100  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 6A, 10V 1.1Ohm @ 6A, 10V 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 90 nC @ 10 V 155 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V 4000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 250W (Tc) 300W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

IPP60R105CFD7XKSA1
IPP60R105CFD7XKSA1
Infineon Technologies
MOSFET N CH
FDI8442
FDI8442
Fairchild Semiconductor
MOSFET N-CH 40V 23A/80A I2PAK
BSC090N03LSGATMA1
BSC090N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 13A/48A TDSON
ZXMP6A16KTC
ZXMP6A16KTC
Diodes Incorporated
MOSFET P-CH 60V 5.4A TO252-3
DMTH4008LFDFWQ-13
DMTH4008LFDFWQ-13
Diodes Incorporated
MOSFET N-CH 40V 11.6A 6UDFN
DMT6012LFDF-13
DMT6012LFDF-13
Diodes Incorporated
MOSFET N-CH 60V 9.5A 6UDFN
IPD30N12S3L31ATMA1
IPD30N12S3L31ATMA1
Infineon Technologies
MOSFET N-CHANNEL_100+
IPD040N03LG
IPD040N03LG
Infineon Technologies
OPTLMOS N-CHANNEL POWER MOSFET
SPI80N06S2-08
SPI80N06S2-08
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
NTD20N03L27-1G
NTD20N03L27-1G
onsemi
MOSFET N-CH 30V 20A IPAK
IXTP3N110
IXTP3N110
IXYS
MOSFET N-CH 1100V 3A TO220AB
SI4176DY-T1-E3
SI4176DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

MEK300-06DA
MEK300-06DA
IXYS
DIODE MODULE 600V 304A Y4-M6
DSP45-16A
DSP45-16A
IXYS
DIODE ARRAY GP 1600V 45A TO247AD
DSEP2X35-06C
DSEP2X35-06C
IXYS
DIODE MODULE 600V 35A SOT227B
MCC310-16IO1
MCC310-16IO1
IXYS
SCR DUAL 1600V 500A Y2-DCB
MCMA65PD1600TB
MCMA65PD1600TB
IXYS
SCR MODULE 1.6KV 65A TO240AA
IXFH50N85X
IXFH50N85X
IXYS
MOSFET N-CH 850V 50A TO247
IXFK300N20X3
IXFK300N20X3
IXYS
MOSFET N-CH 200V 300A TO264
IXTP220N075T
IXTP220N075T
IXYS
MOSFET N-CH 75V 220A TO220AB
IXFR12N120P
IXFR12N120P
IXYS
MOSFET N-CH 1200V ISOPLUS247
IXGN72N60C3H1
IXGN72N60C3H1
IXYS
IGBT MOD 600V 78A 360W SOT227B
IXGR50N60C2D1
IXGR50N60C2D1
IXYS
IGBT 600V 75A 200W ISOPLUS247
IXDI414SI
IXDI414SI
IXYS
IC GATE DRVR LOW-SIDE 14SOIC