IXFQ72N30X3
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IXYS IXFQ72N30X3

Manufacturer No:
IXFQ72N30X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ72N30X3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 72A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXFQ72N30X3 IXFP72N30X3   IXFQ72N20X3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc) 72A (Tc) 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 36A, 10V 19mOhm @ 36A, 10V 20mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA 4.5V @ 1.5mA 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 82 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V 5400 pF @ 25 V 3780 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 390W (Tc) 390W (Tc) 320W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-220-3 TO-3P
Package / Case TO-3P-3, SC-65-3 TO-220-3 TO-3P-3, SC-65-3

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