IXFQ60N50P3
  • Share:

IXYS IXFQ60N50P3

Manufacturer No:
IXFQ60N50P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ60N50P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 60A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$10.08
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFQ60N50P3 IXFQ20N50P3   IXFQ50N50P3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 20A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V 300mOhm @ 10A, 10V 120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 1.5mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 36 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 25 V 1800 pF @ 25 V 4335 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1040W (Tc) 380W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

SI3445DV
SI3445DV
Fairchild Semiconductor
P-CHANNEL MOSFET
ZXM62P02E6TA
ZXM62P02E6TA
Diodes Incorporated
MOSFET P-CH 20V 2.3A SOT23-6
IRFR9110PBF
IRFR9110PBF
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
IPA60R125C6XKSA1
IPA60R125C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 30A TO220-FP
DMP10H088SPS-13
DMP10H088SPS-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
TK11P65W,RQ
TK11P65W,RQ
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 11.1A DPAK
SI7328DN-T1-GE3
SI7328DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK1212-8
APT30M61SLLG/TR
APT30M61SLLG/TR
Microchip Technology
MOSFET N-CH 300V 54A D3PAK
SPP11N65C3XK
SPP11N65C3XK
Infineon Technologies
SPP11N65 - 650V AND 700V COOLMOS
IXFT32N50Q
IXFT32N50Q
IXYS
MOSFET N-CH 500V 32A TO268
NTMSD6N303R2
NTMSD6N303R2
onsemi
MOSFET N-CH 30V 6A 8SOIC
MCH6336-TL-H
MCH6336-TL-H
onsemi
MOSFET P-CH 12V 5A 6MCPH

Related Product By Brand

VUO62-16NO7
VUO62-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 63A PWS-D
VUO30-12NO3
VUO30-12NO3
IXYS
BRIDGE RECT 3P 1.2KV 37A FO-F-B
VUO16-08NO1
VUO16-08NO1
IXYS
BRIDGE RECT 3PHASE 800V 20A V1-A
MCD162-16IO1
MCD162-16IO1
IXYS
MOD THYRISTOR/DIODE 1600V Y4-M6
MCC95-18IO1B
MCC95-18IO1B
IXYS
MOD THYRISTOR DUAL 1800V TO240AA
IXTY08N50D2
IXTY08N50D2
IXYS
MOSFET N-CH 500V 800MA TO252
IXTA60N10T
IXTA60N10T
IXYS
MOSFET N-CH 100V 60A TO263
IXFV36N50P
IXFV36N50P
IXYS
MOSFET N-CH 500V 36A PLUS220
IXSN52N60AU1
IXSN52N60AU1
IXYS
IGBT MOD 600V 80A 250W SOT227B
IXYH24N170CV1
IXYH24N170CV1
IXYS
IGBT 1.7KV 58A TO247
IXYP8N90C3D1
IXYP8N90C3D1
IXYS
IGBT 900V 20A 125W TO220
IXGH16N60C2D1
IXGH16N60C2D1
IXYS
IGBT 600V 40A 150W TO247