IXFQ60N50P3
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IXYS IXFQ60N50P3

Manufacturer No:
IXFQ60N50P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ60N50P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 60A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXFQ60N50P3 IXFQ20N50P3   IXFQ50N50P3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 20A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V 300mOhm @ 10A, 10V 120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 1.5mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 36 nC @ 10 V 85 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 25 V 1800 pF @ 25 V 4335 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1040W (Tc) 380W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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