IXFQ50N50P3
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IXYS IXFQ50N50P3

Manufacturer No:
IXFQ50N50P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ50N50P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 50A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4335 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):960W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXFQ50N50P3 IXFQ60N50P3   IXFQ50N60P3   IXFQ20N50P3  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 60A (Tc) 50A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V 100mOhm @ 30A, 10V 145mOhm @ 500mA, 10V 300mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 5V @ 4mA 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 96 nC @ 10 V 94 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4335 pF @ 25 V 6250 pF @ 25 V 6300 pF @ 25 V 1800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 960W (Tc) 1040W (Tc) 1040W (Tc) 380W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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