IXFQ28N60P3
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IXYS IXFQ28N60P3

Manufacturer No:
IXFQ28N60P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ28N60P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 28A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3560 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):695W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXFQ28N60P3 IXFQ22N60P3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 14A, 10V 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3560 pF @ 25 V 2600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 695W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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