IXFQ26N50
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IXYS IXFQ26N50

Manufacturer No:
IXFQ26N50
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ26N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 26A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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In Stock

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Similar Products

Part Number IXFQ26N50 IXFQ26N50Q   IXFR26N50  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 26A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 10V
Rds On (Max) @ Id, Vgs - - 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id - - 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs - - 160 nC @ 10 V
Vgs (Max) - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - 4200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - - 250W (Tc)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P ISOPLUS247™
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-247-3

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