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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
IXFQ23N60Q
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IXYS IXFQ23N60Q
Manufacturer No:
IXFQ23N60Q
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFQ23N60Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 23A TO268
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-268AA
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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UnitPrice:
-
Quantity:
216
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