IXFQ12N80P
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IXYS IXFQ12N80P

Manufacturer No:
IXFQ12N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFQ12N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 12A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXFQ12N80P IXFQ14N80P   IXFQ10N80P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 14A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 500mA, 10V 720mOhm @ 500mA, 10V 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5.5V @ 4mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 61 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V 3900 pF @ 25 V 2050 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 400W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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