IXFP8N85XM
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IXYS IXFP8N85XM

Manufacturer No:
IXFP8N85XM
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP8N85XM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 850V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):850 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:654 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXFP8N85XM IXFP4N85XM   IXFP8N85X  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V 850 V 850 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 3.5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V 2.5Ohm @ 2A, 10V 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 7 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 654 pF @ 25 V 247 pF @ 25 V 654 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 33W (Tc) 35W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220 TO-220AB (IXFP)
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3

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