IXFP8N50P3
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IXYS IXFP8N50P3

Manufacturer No:
IXFP8N50P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP8N50P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 8A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:705 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXFP8N50P3 IXFP8N50PM   IXFP5N50P3  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.4A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V 800mOhm @ 4A, 10V 1.65Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 5.5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 20 nC @ 10 V 6.9 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 705 pF @ 25 V 1050 pF @ 25 V 370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 180W (Tc) 42W (Tc) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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