IXFP60N25X3M
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IXYS IXFP60N25X3M

Manufacturer No:
IXFP60N25X3M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP60N25X3M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 60A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3610 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB (IXFP)
Package / Case:TO-220-3
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Similar Products

Part Number IXFP60N25X3M IXFP30N25X3M   IXFP60N25X3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 30A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V 60mOhm @ 15A, 10V 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA 4.5V @ 500µA 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 21 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3610 pF @ 25 V 1450 pF @ 25 V 3610 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 36W (Tc) 36W (Tc) 320W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB (IXFP) TO-220 Isolated Tab TO-220AB (IXFP)
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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