IXFP5N100PM
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IXYS IXFP5N100PM

Manufacturer No:
IXFP5N100PM
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP5N100PM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 2.3A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1830 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXFP5N100PM IXFP5N100P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 2.5A, 10V 2.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 6V @ 250µA 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V 33.4 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V 1830 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3

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