IXFP56N30X3
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IXYS IXFP56N30X3

Manufacturer No:
IXFP56N30X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP56N30X3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 56A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:27mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXFP56N30X3 IXFP56N30X3M   IXFP26N30X3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 56A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 28A, 10V 27mOhm @ 28A, 10V 66mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA 4.5V @ 1.5mA 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 25 V 3750 pF @ 25 V 1465 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 320W (Tc) 36W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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