IXFP4N85XM
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IXYS IXFP4N85XM

Manufacturer No:
IXFP4N85XM
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP4N85XM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 850V 3.5A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):850 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:247 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IXFP4N85XM IXFP8N85XM   IXFP14N85XM   IXFP4N85X  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V 850 V 850 V 850 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 8A (Tc) 14A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V 850mOhm @ 4A, 10V 550mOhm @ 7A, 10V 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 1mA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 17 nC @ 10 V 30 nC @ 10 V 7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 247 pF @ 25 V 654 pF @ 25 V 1043 pF @ 25 V 247 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 33W (Tc) 38W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 Isolated Tab TO-220 TO-220AB (IXFP)
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3

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