IXFP4N60P3
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IXYS IXFP4N60P3

Manufacturer No:
IXFP4N60P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP4N60P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:365 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXFP4N60P3 IXFP7N60P3   IXFP14N60P3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 7A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V 1.15Ohm @ 500mA, 10V 540mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V 13.3 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 365 pF @ 25 V 705 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 114W (Tc) 180W (Tc) 327W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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