IXFP38N30X3
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IXYS IXFP38N30X3

Manufacturer No:
IXFP38N30X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP38N30X3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 38A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXFP38N30X3 IXFP38N30X3M  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 50mOhm @ 19A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 240W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220 Isolated Tab
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab

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