IXFP36N60X3
  • Share:

IXYS IXFP36N60X3

Manufacturer No:
IXFP36N60X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP36N60X3 Datasheet
ECAD Model:
-
Description:
MOSFET ULTRA JCT 600V 36A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$6.89
124

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFP36N60X3 IXFP36N20X3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 10V 45mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V 1425 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 446W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

BSP372NH6327XTSA1
BSP372NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 1.8A SOT223-4
RJK0351DPA-00#J0
RJK0351DPA-00#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 40A 8WPAK
2SK2114-E
2SK2114-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IRL40SC209
IRL40SC209
Infineon Technologies
MOSFET N-CH 40V 478A D2PAK
TSM80N950CI C0G
TSM80N950CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 800V 6A ITO220AB
NX138AKR
NX138AKR
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
MSC750SMA170S
MSC750SMA170S
Microchip Technology
TRANS SJT 1700V D3PAK
IXTH2N170D2
IXTH2N170D2
IXYS
MOSFET N-CH 1700V 2A TO247
AOTF22N50L
AOTF22N50L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 22A TO220-3F
IRF6637TR1
IRF6637TR1
Infineon Technologies
MOSFET N-CH 30V 14A DIRECTFET
IPP085N06LGAKSA1
IPP085N06LGAKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO-220
AO3404_101
AO3404_101
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5A SOT23-3

Related Product By Brand

DNA30E2200PC-TUB
DNA30E2200PC-TUB
IXYS
DIODE GEN PURP 2.2KV 30A TO263
CS23-16IO2
CS23-16IO2
IXYS
SCR 1.6KV 50A TO208AA
CS19-12HO1C
CS19-12HO1C
IXYS
SCR 1.2KV 35A ISOPLUS220
IXFH32N50
IXFH32N50
IXYS
MOSFET N-CH 500V 32A TO247AD
IXTC180N10T
IXTC180N10T
IXYS
MOSFET N-CH 100V 90A ISOPLUS220
IXFP4N100Q
IXFP4N100Q
IXYS
MOSFET N-CH 1000V 4A TO220AB
IXBH14N250
IXBH14N250
IXYS
IGBT 2500V TO247AD
IXGK60N60B2D1
IXGK60N60B2D1
IXYS
IGBT 600V 75A 500W TO264
IXGP20N120
IXGP20N120
IXYS
IGBT 1200V 40A 150W TO220
IXST45N120B
IXST45N120B
IXYS
IGBT 1200V 75A 300W TO268
IXGH12N60C
IXGH12N60C
IXYS
IGBT 600V 24A 100W TO247AD
IX4R11S3T/R
IX4R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC