IXFP36N60X3
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IXYS IXFP36N60X3

Manufacturer No:
IXFP36N60X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP36N60X3 Datasheet
ECAD Model:
-
Description:
MOSFET ULTRA JCT 600V 36A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number IXFP36N60X3 IXFP36N20X3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 10V 45mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V 1425 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 446W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220-3
Package / Case TO-220-3 TO-220-3

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