IXFP36N20X3M
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IXYS IXFP36N20X3M

Manufacturer No:
IXFP36N20X3M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP36N20X3M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 36A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1425 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXFP36N20X3M IXFP36N20X3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 18A, 10V 45mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 500µA 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1425 pF @ 25 V 1425 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 36W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3

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