IXFP34N65X2M
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IXYS IXFP34N65X2M

Manufacturer No:
IXFP34N65X2M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP34N65X2M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 34A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXFP34N65X2M IXFP34N65X2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 17A, 10V 105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3230 pF @ 25 V 3330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3

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