IXFP18N65X2
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IXYS IXFP18N65X2

Manufacturer No:
IXFP18N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP18N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 18A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):290W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number IXFP18N65X2 IXFP8N65X2   IXFP18N65X2M   IXFP12N65X2  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 8A (Tc) 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 450mOhm @ 4A, 10V 200mOhm @ 9A, 10V 310mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 5V @ 250µA 5V @ 1.5mA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 11 nC @ 10 V 29 nC @ 10 V 18.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 25 V 790 pF @ 25 V 1520 pF @ 25 V 1134 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 290W (Tc) 150W (Tc) 290W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220-3 TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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