IXFP130N10T2
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IXYS IXFP130N10T2

Manufacturer No:
IXFP130N10T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP130N10T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 130A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXFP130N10T2 IXFP180N10T2   IXFP130N10T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 180A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 65A, 10V 6mOhm @ 50A, 10V 9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4V @ 250µA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 185 nC @ 10 V 104 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 10500 pF @ 25 V 5080 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 480W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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