IXFP12N50P
  • Share:

IXYS IXFP12N50P

Manufacturer No:
IXFP12N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFP12N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 12A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1830 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.98
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFP12N50P IXFP16N50P   IXFP12N50PM  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 400mOhm @ 8A, 10V 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA 5.5V @ 2.5mA 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 43 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V 2250 pF @ 25 V 1830 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 300W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AOD4185
AOD4185
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 40V 40A TO252
IRFR5505TRLPBF
IRFR5505TRLPBF
Infineon Technologies
MOSFET P-CH 55V 18A DPAK
IRF6794MTR1PBF
IRF6794MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 32A DIRECTFET
IPL60R285P7AUMA1
IPL60R285P7AUMA1
Infineon Technologies
MOSFET N-CH 600V 13A 4VSON
FQU2N90TU-WS
FQU2N90TU-WS
onsemi
MOSFET N-CH 900V 1.7A IPAK
TSM60N600CH C5G
TSM60N600CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 8A TO251
IPI80N06S208AKSA2
IPI80N06S208AKSA2
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
IRF1104STRR
IRF1104STRR
Infineon Technologies
MOSFET N-CH 40V 100A D2PAK
IRF730L
IRF730L
Vishay Siliconix
MOSFET N-CH 400V 5.5A I2PAK
NTHS4501NT1
NTHS4501NT1
onsemi
MOSFET N-CH 30V 4.9A CHIPFET
IRLR7833CTRLPBF
IRLR7833CTRLPBF
Infineon Technologies
MOSFET N-CH 30V 140A DPAK
SIE806DF-T1-GE3
SIE806DF-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A 10POLARPAK

Related Product By Brand

DSEI30-06A
DSEI30-06A
IXYS
DIODE GEN PURP 600V 37A TO247AD
MCO600-16IO1
MCO600-16IO1
IXYS
MOD THYRISTOR SGL 1600V Y1-CU
IXTH15N50L2
IXTH15N50L2
IXYS
MOSFET N-CH 500V 15A TO247
IXFX80N60P3
IXFX80N60P3
IXYS
MOSFET N-CH 600V 80A PLUS247-3
IXTP42N25P
IXTP42N25P
IXYS
MOSFET N-CH 250V 42A TO220AB
IXTP1N100
IXTP1N100
IXYS
MOSFET N-CH 1000V 1.5A TO220AB
IXFV15N100P
IXFV15N100P
IXYS
MOSFET N-CH 1000V 15A PLUS220
IXFL55N50
IXFL55N50
IXYS
MOSFET N-CH 500V 55A ISOPLUS264
IXGQ28N120B
IXGQ28N120B
IXYS
IGBT 1200V 50A 250W TO3P
IXGP4N100
IXGP4N100
IXYS
IGBT 1000V 8A 40W TO220AB
IXI848S1T/R
IXI848S1T/R
IXYS
IC CURRENT MONITOR 0.7% 8SOIC
IXDD514SIAT/R
IXDD514SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC