IXYS-IXFN90N170SK - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id:	4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs:	376 nC @ 20 V
Vgs (Max):	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:	7340 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC

IXYS IXFN90N170SK