IXFN80N50Q3
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IXYS IXFN80N50Q3

Manufacturer No:
IXFN80N50Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN80N50Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 63A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):780W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN80N50Q3 IXFN80N50Q2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 40A, 10V 60mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V 12800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 780W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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