IXFN80N50Q3
  • Share:

IXYS IXFN80N50Q3

Manufacturer No:
IXFN80N50Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN80N50Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 63A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):780W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$51.90
13

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN80N50Q3 IXFN80N50Q2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 40A, 10V 60mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V 12800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 780W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

STO36N60M6
STO36N60M6
STMicroelectronics
MOSFET N-CH 600V 30A TOLL
BUZ30AH3045A
BUZ30AH3045A
Infineon Technologies
BUZ30 - 12V-300V N-CHANNEL POWER
FQT5P10TF
FQT5P10TF
onsemi
MOSFET P-CH 100V 1A SOT223-4
SIHG105N60EF-GE3
SIHG105N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 29A TO247AC
SIHP18N60E-GE3
SIHP18N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 18A TO220AB
BSO065N03MSGXUMA1
BSO065N03MSGXUMA1
Infineon Technologies
MOSFET N-CH 30V 13A 8DSO
NTF3055-160T1
NTF3055-160T1
onsemi
MOSFET N-CH 60V 2A SOT223
SIR788DP-T1-GE3
SIR788DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
AUIRFU1010Z
AUIRFU1010Z
Infineon Technologies
MOSFET N-CH 55V 91A TO262
UPA2813T1L-E1-AT
UPA2813T1L-E1-AT
Renesas Electronics America Inc
MOSFET P-CH 30V 27A 8HVSON
TSM4459CS RLG
TSM4459CS RLG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 30V 17A 8SOP
RSH065N03TB1
RSH065N03TB1
Rohm Semiconductor
MOSFET N-CH 30V 6.5A 8SOP

Related Product By Brand

DSEP6-06BS-TRL
DSEP6-06BS-TRL
IXYS
DIODE GEN PURP 600V 6A TO252AA
IXTP24N65X2M
IXTP24N65X2M
IXYS
MOSFET N-CH 650V 24A TO220
IXTH1N450HV
IXTH1N450HV
IXYS
MOSFET N-CH 4500V 1A TO247HV
IXFT80N10Q
IXFT80N10Q
IXYS
MOSFET N-CH 100V 80A TO268
IXTN79N20
IXTN79N20
IXYS
MOSFET N-CH 200V 85A SOT227B
IXFH14N60P3
IXFH14N60P3
IXYS
MOSFET N-CH 600V 14A TO247AD
IXGH35N120B
IXGH35N120B
IXYS
IGBT 1200V 70A 300W TO247
IXGT28N120BD1
IXGT28N120BD1
IXYS
IGBT 1200V 50A 250W TO268
IXGX320N60A3
IXGX320N60A3
IXYS
IGBT 600V 320A 1000W PLUS247
IXGA12N60B
IXGA12N60B
IXYS
IGBT 600V 24A 100W TO263AA
IXDI404SI-16
IXDI404SI-16
IXYS
IC GATE DRVR LOW-SIDE 16SOIC
IXDE514SIAT/R
IXDE514SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC