IXFN80N50P
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IXYS IXFN80N50P

Manufacturer No:
IXFN80N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN80N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 66A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:12700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN80N50P IXFN80N50  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V 55mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V 380 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12700 pF @ 25 V 9890 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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