IXFN73N30
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IXYS IXFN73N30

Manufacturer No:
IXFN73N30
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN73N30 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 73A SOT-227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN73N30 IXFN73N30Q  
Manufacturer IXYS IXYS
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 500mA, 10V 45mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V 195 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 5400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 481W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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