IXFN70N100X
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IXYS IXFN70N100X

Manufacturer No:
IXFN70N100X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN70N100X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 56A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:89mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:6V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:9150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN70N100X IXFN74N100X  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 89mOhm @ 35A, 10V 66mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 6V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 425 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9150 pF @ 25 V 17000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1200W (Tc) 1170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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