IXFN64N50PD2
  • Share:

IXYS IXFN64N50PD2

Manufacturer No:
IXFN64N50PD2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN64N50PD2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 52A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN64N50PD2 IXFN64N50PD3  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 186 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 25 V 11000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 625W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

IRFS654B
IRFS654B
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IXTH02N450HV
IXTH02N450HV
IXYS
MOSFET N-CH 4500V 200MA TO247HV
IAUT260N10S5N019ATMA1
IAUT260N10S5N019ATMA1
Infineon Technologies
MOSFET N-CH 100V 260A 8HSOF
IPB180N04S401ATMA1
IPB180N04S401ATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
DMT6006LK3-13
DMT6006LK3-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO252 T&R
IRF9Z24STRRPBF
IRF9Z24STRRPBF
Vishay Siliconix
MOSFET P-CH 60V 11A D2PAK
APT10026JLL
APT10026JLL
Microchip Technology
MOSFET N-CH 1000V 30A ISOTOP
NDT455N
NDT455N
onsemi
MOSFET N-CH 30V 11.5A SOT223-4
MMFT960T1G
MMFT960T1G
onsemi
MOSFET N-CH 60V 300MA SOT223
FQD19N10TM_F080
FQD19N10TM_F080
onsemi
MOSFET N-CH 100V 15.6A DPAK
SI6443DQ-T1-GE3
SI6443DQ-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 7.3A 8TSSOP
PMV32UP/MIR
PMV32UP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 4A TO236AB

Related Product By Brand

DPF60XA400NA
DPF60XA400NA
IXYS
DIODE GEN PURP 400V 60A SOT227B
MMO62-12IO6
MMO62-12IO6
IXYS
MODULE AC CTLR 1200V SOT-227B
MCC72-16IO8B
MCC72-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
IXTP4N70X2M
IXTP4N70X2M
IXYS
MOSFET N-CH 700V 4A TO220
IXFH150N30X3
IXFH150N30X3
IXYS
MOSFET N-CH 300V 150A TO247
IXTN8N150L
IXTN8N150L
IXYS
MOSFET N-CH 1500V 7.5A SOT-227B
IXFR20N120P
IXFR20N120P
IXYS
MOSFET N-CH 1200V 13A ISOPLUS247
IXFH75N10Q
IXFH75N10Q
IXYS
MOSFET N-CH 100V 75A TO247AD
IXBH14N250
IXBH14N250
IXYS
IGBT 2500V TO247AD
IXGH40N60C2D1
IXGH40N60C2D1
IXYS
IGBT 600V 75A 300W TO247AD
IXST30N60B
IXST30N60B
IXYS
IGBT 600V 55A 200W TO268
IXGH15N120B
IXGH15N120B
IXYS
IGBT 1200V 30A 180W TO247AD