IXFN64N50PD2
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IXYS IXFN64N50PD2

Manufacturer No:
IXFN64N50PD2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN64N50PD2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 52A SOT-227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN64N50PD2 IXFN64N50PD3  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 186 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 25 V 11000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 625W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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