IXFN50N120SK
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IXYS IXFN50N120SK

Manufacturer No:
IXFN50N120SK
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN50N120SK Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1200V 48A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:1895 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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$78.31
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Similar Products

Part Number IXFN50N120SK IXFN70N120SK  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 2.8V @ 10mA 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 20 V 161 nC @ 20 V
Vgs (Max) +20V, -5V +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1895 pF @ 1000 V 2790 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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