IXYS-IXFN50N120SIC - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:	2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	100 nC @ 20 V
Vgs (Max):	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:	1900 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC

IXYS IXFN50N120SIC