IXFN38N100Q2
  • Share:

IXYS IXFN38N100Q2

Manufacturer No:
IXFN38N100Q2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN38N100Q2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 38A SOT-227
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$47.33
12

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN38N100Q2 IXFL38N100Q2  
Manufacturer IXYS IXYS
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 19A, 10V 280mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V 13500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 380W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B ISOPLUS264™
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

IRFH5006TRPBF
IRFH5006TRPBF
Infineon Technologies
MOSFET N-CH 60V 21A/100A 8PQFN
TP65H035WS
TP65H035WS
Transphorm
GANFET N-CH 650V 46.5A TO247-3
DMP21D5UFB4-7B
DMP21D5UFB4-7B
Diodes Incorporated
MOSFET P-CH 20V 700MA 3DFN
IPB067N08N3GATMA1
IPB067N08N3GATMA1
Infineon Technologies
MOSFET N-CH 80V 80A D2PAK
SUM70030E-GE3
SUM70030E-GE3
Vishay Siliconix
MOSFET N-CH 100V 150A TO263
IPP60R160C6XKSA1
IPP60R160C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 23.8A TO220-3
SI8821EDB-T2-E1
SI8821EDB-T2-E1
Vishay Siliconix
MOSFET P-CH 30V 4MICROFOOT
PMV160UPVL
PMV160UPVL
Nexperia USA Inc.
MOSFET P-CH 20V 1.2A TO236AB
AOTF12N65
AOTF12N65
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 12A TO220-3F
BUK7880-55A,115
BUK7880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT-223
IRFP1405
IRFP1405
Infineon Technologies
MOSFET N-CH 55V 95A TO247AC
IPP08CN10N G
IPP08CN10N G
Infineon Technologies
MOSFET N-CH 100V 95A TO220-3

Related Product By Brand

DCG100X1200NA
DCG100X1200NA
IXYS
DIODE MOD SCHOTTKY 1200V SOT227B
DSSK28-0045B
DSSK28-0045B
IXYS
DIODE ARRAY SCHOTTKY 45V TO220AB
DSEI30-06A
DSEI30-06A
IXYS
DIODE GEN PURP 600V 37A TO247AD
CLA60PD1200NA
CLA60PD1200NA
IXYS
MOD THYRISTOR DUAL 1200V SOT-227
MCC26-16IO8B
MCC26-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
IXFK27N80Q
IXFK27N80Q
IXYS
MOSFET N-CH 800V 27A TO264AA
IXTK120N65X2
IXTK120N65X2
IXYS
MOSFET N-CH 650V 120A TO264
IXTA08N100P
IXTA08N100P
IXYS
MOSFET N-CH 1000V 800MA TO263
IXFR20N80P
IXFR20N80P
IXYS
MOSFET N-CH 800V 11A ISOPLUS247
IXTH240N055T
IXTH240N055T
IXYS
MOSFET N-CH 55V 240A TO247
IXGH32N60CD1
IXGH32N60CD1
IXYS
IGBT 600V 60A 200W TO247AD
IXSH30N60CD1
IXSH30N60CD1
IXYS
IGBT 600V 55A 200W TO247AD