IXFN36N110P
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IXYS IXFN36N110P

Manufacturer No:
IXFN36N110P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN36N110P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1100V 36A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1100 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:240mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1000W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN36N110P IXFN30N110P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V 1100 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V 360mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 235 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 13600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1000W (Tc) 695W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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